TIP31/TIP31a/TIP31b/TIP31c ? np n epitaxial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com TIP31/TIP31a/TIP31b/TIP31c rev. a 1 july 2008 TIP31/TIP31a/TIP31b/TIP31c npn epitaxial silicon transistor features ? complementary to tip32/tip32a/tip32b/tip32c absolute maximum ratings t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage : TIP31 : TIP31a : TIP31b : TIP31c 40 60 80 100 v v v v v ceo collector-emitter voltage : TIP31 : TIP31a : TIP31b : TIP31c 40 60 80 100 v v v v v ebo emitter-base voltage 5 v i c collector current (dc) 3 a i cp collector cu rrent (pulse) 5 a i b base current 1 a p c collector dissipation (t c =25 c) 40 w collector dissipation (t a =25 c) 2 w t j junction temperature 150 c t stg storage temperature - 65 ~ 150 c 1. base 2. collector 3. emitter
TIP31/TIP31a/TIP31b/TIP31c ? np n epitaxial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com TIP31/TIP31a/TIP31b/TIP31c rev. a 2 electrical characteristics t c =25 c unless otherwise noted * pulse test: pw 300ms, duty cycle 2% symbol parameter test condition min. max. units v ceo (sus) * collector-emitter sustaining voltage : TIP31 : TIP31a : TIP31b : TIP31c i c = 30ma, i b = 0 40 60 80 100 v v v v i ceo collector cu t-off current : TIP31/31a : TIP31b/31c v ce = 30v, i b = 0 v ce = 60v, i b = 0 0.3 0.3 ma ma i ces collector cu t-off current : TIP31 : TIP31a : TIP31b : TIP31c v ce = 40v, v eb = 0 v ce = 60v, v eb = 0 v ce = 80v, v eb = 0 v ce = 100v, v eb = 0 200 200 200 200 a a a a i ebo emitter cut-off current v eb = 5v, i c = 0 1 ma h fe * dc current gain v ce = 4v, i c = 1a v ce = 4v, i c = 3a 25 10 50 v ce (sat) * collector-emitter saturation voltage i c = 3a, i b = 375ma 1.2 v v be (sat) * base-emitter saturation voltage v ce = 4v, i c = 3a 1.8 v f t current gain bandwidth product v ce = 10v, i c = 500ma, f = 1mhz 3.0 mhz
TIP31/TIP31a/TIP31b/TIP31c ? np n epitaxial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com TIP31/TIP31a/TIP31b/TIP31c rev. a 3 typical characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. safe operating area figure 4. power derating 1 10 100 1000 10000 1 10 100 1000 v ce = 4v h fe , dc current gain i c [ma], collector current 1 10 100 1000 10000 10 100 1000 10000 i c /i b = 10 v ce (sat) v be (sat) v be (sat), v ce (sat)[mv], saturation voltage i c [ma], collector current 10 100 0.1 1 10 100 s TIP31c v ceo max. TIP31b v ceo max. TIP31a v ceo max. TIP31 v ceo max. i c (max) (dc) i c (max) (pulse) 5 m s 1 m s i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 200 0 5 10 15 20 25 30 35 40 45 50 p c [w], power dissipation t c [ o c], case temperature
TIP31/TIP31a/TIP31b/TIP31c ? np n epitaxial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com TIP31/TIP31a/TIP31b/TIP31c rev. a 4 mechanical dimensions to220
TIP31/TIP31a/TIP31b/TIP31c np n epitaxial silicon transistor TIP31/TIP31a/TIP31b/TIP31c ? 2008 fairchild semiconductor corporation www.fairchildsemi.com TIP31/TIP31a/TIP31b/TIP31c rev. a 5
|
